Formation Mechanism and Characterization of Black Silicon Surface by a Single-Step Wet-Chemical Process

被引：1

作者：

Li, Li-gong ^{[1
,3
]}

Liu, Shu-man ^{[1
]}

Yo, Xiao-ling ^{[1
]}

Hossu, Marius ^{[2
]}

Jiang, Ke ^{[2
]}

Chen, Wei ^{[2
]}

Wang, Zhan-guo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Univ Texas Arlington, Dept Phys, Arlington, TX 76019 USA

[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 05期

基金：

美国国家科学基金会;

关键词：

Nanostructure; Silicon; Anodization; Electroless Deposition; SI NANOWIRES; METAL; PHOTOLUMINESCENCE; NANOPARTICLES; DEPOSITION; PARTICLE;

D O I：

10.1166/jnn.2012.5853

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a simple single-step etching method for formation of black surface on silicon wafer by using HAuCl4-HF-H2O2 etching solution, in which catalytic Au particles were deposited in situ. The black surface suppresses the reflectivity in a wide spectral region. The formation mechanism involved has been discussed.

引用

页码：3954 / 3958

页数：5

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