Synthesis and Structural-Optical Properties of Ga-Doped ZnO Nanowires by Hot-Walled Pulsed Laser Deposition Method

被引：3

作者：

Kim, Kyoungwon ^{[2
,3
]}

Lee, Dong-Yun ^{[3
]}

Park, Dong-Hoon ^{[3
]}

Kim, Sangsig ^{[2
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, Chungbuk, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[3] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 130650, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 05期

关键词：

ZnO; GZO; HW-PLD; Stacking Faults; D-0 X Peak; P-TYPE; THIN-FILMS; GROWTH;

D O I：

10.1166/jnn.2012.5935

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Well-aligned single-crystalline zinc oxide (ZnO) and Ga doped ZnO (GZO) NWs (NWs) were successfully fabricated on Au film catalyzed sapphire substrate using vapor liquid solid (VLS) method in hot-walled pulsed laser deposition (HW-PLD). The structural and optical properties of Ga doped ZnO NWs have been investigated depending on various concentration of Ga dopants in ZnO NWs. As increasing Ga concentration, stacking faults were observed by using FE-SEM and an exciton bound to a neutral donor (D-0 X) peak was clearly observed by using PL spectra. From the structural and optical properties, the ZnO NWs by doping could be application to electronic and optoelectronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and nano-sensors.

引用

页码：4173 / 4176

页数：4

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