Thickness dependence of optoelectronic properties in ALD grown ZnO thin films

被引：68

作者：

Singh, Trilok ^{[1
]}

Lehnen, Thomas ^{[1
]}

Leuning, Tessa ^{[1
]}

Sahu, Diptiranjan ^{[2
,3
]}

Mathur, Sanjay ^{[1
]}

机构：

[1] Univ Cologne, Inst Inorgan & Mat Chem, D-50939 Cologne, Germany

[2] Univ Witwatersrand, Sch Phys, ZA-2050 Johannesburg, South Africa

[3] Univ Witwatersrand, DST NRF Ctr Excellence Strong Mat, ZA-2050 Johannesburg, South Africa

来源：

APPLIED SURFACE SCIENCE | 2014年 / 289卷

关键词：

ZnO; Atomic layer deposition; Stress; Band gap; Resistivity; Photoluminescence; ATOMIC LAYER DEPOSITION; OPTICAL-PROPERTIES; SURFACE-CHEMISTRY; METALLIC ZN; ZINC-OXIDE; TEMPERATURE; STRAIN; SEMICONDUCTORS; NANOPARTICLES; SUBSTRATE;

D O I：

10.1016/j.apsusc.2013.10.071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films with high conductivity and high transparency were grown on Si (1 0 0) substrates by atomic layer deposition. Thickness dependent (43-225 nm) changes in crystallographic, optical and electrical properties are reported and discussed. Increase in film thickness caused a decrease in the bandgap by relaxation of stress in the plane of the film and led to an improvement in crystallinity and conductivity. The optical studies showed a noticeable change towards the contribution of excitonic and phonon replica to the UV-emission band. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：27 / 32

页数：6

共 45 条

[1] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[2] High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn [J].

Chen, SJ ;

Liu, YC ;

Ma, JG ;

Zhao, DX ;

Zhi, ZZ ;

Lu, YM ;

Zhang, JY ;

Shen, DZ ;

Fan, XW .

JOURNAL OF CRYSTAL GROWTH, 2002, 240 (3-4) :467-472

[3] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].

Cho, SL ;

Ma, J ;

Kim, YK ;

Sun, Y ;

Wong, GKL ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763

[4] Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J].

Cox, SFJ ;

Davis, EA ;

Cottrell, SP ;

King, PJC ;

Lord, JS ;

Gil, JM ;

Alberto, HV ;

Vilao, RC ;

Duarte, JP ;

de Campos, NA ;

Weidinger, A ;

Lichti, RL ;

Irvine, SJC .

PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2601-2604

[5]

Cullity B. D., 2001, ELEMENTS XRAY DIFFRA, V3

[6] Transparent conducting zinc oxide thin films doped with aluminum and molybdenum [J].

Duenow, Joel N. ;

Gessert, Timothy A. ;

Wood, David M. ;

Barnes, Teresa M. ;

Young, Matthew ;

To, Bobby ;

Coutts, Timothy J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (04) :955-960

[7] Surface chemistry for atomic layer growth [J].

George, SM ;

Ott, AW ;

Klaus, JW .

JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) :13121-13131

[8] Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films [J].

Ghosh, R ;

Basak, D ;

Fujihara, S .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2689-2692

[9] Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[10] Strain and its effect on optical properties of Al-N codoped ZnO films [J].

He, HP ;

Zhuge, F ;

Ye, ZZ ;

Zhu, LP ;

Wang, FZ ;

Zhao, BH ;

Huang, JY .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)

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