Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks

被引:11
作者
Alizadeh, Azar [1 ]
Hays, David [1 ]
Taylor, Seth T. [1 ]
Keimel, Chris [1 ]
Conway, Ken R. [1 ]
Denault, Lauraine [1 ]
Krishnan, Kasiraman [1 ]
Watkins, Vicki H. [1 ]
Neander, Rosalyn [1 ]
Brown, Jay S. [2 ]
Stintz, Andreas [2 ]
Krishna, Sanjay [2 ]
Blumin, Marina [3 ]
Saveliev, Igor [3 ]
Ruda, Harry E. [3 ]
Braunstein, Edit [4 ]
Jones, Colin [4 ]
机构
[1] GE Global Res, Niskayuna, NY 12309 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3] Univ Toronto, Dept Mat Sci, Toronto, ON M5S 3E4, Canada
[4] Missiles & Fire Control Lockheed Martin, Orlando, FL 32819 USA
关键词
epitaxial growth; gallium arsenide; III-V semiconductors; indium compounds; nanolithography; photoluminescence; semiconductor growth; semiconductor quantum dots; SELECTIVE GROWTH; AREA GROWTH; ARRAYS; INXGA1-XAS; GAAS(001); CATHODOLUMINESCENCE; NANOSTRUCTURES;
D O I
10.1063/1.3082494
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on selective area growth of InAs and GaAs quantum dots (QDs) on GaAs through similar to 20 nm SiO2 windows prepared by block copolymer lithography. We discuss the mechanisms of growth through these masks, highlighting the variation of the resulting morphology (dot size, spacing, uniformity, and areal density) as a function of growth parameters. We have obtained highly uniform arrays of InAs and GaAs QDs with mean diameters and areal densities of 20.6 nm and 1x10(11) cm(-2), respectively. We have also investigated the optical characteristics of these QDs as a function of temperature and drawn correlations between the optical response and their crystalline quality.
引用
收藏
页数:6
相关论文
共 35 条
  • [1] Templated wide band-gap nanostructures
    Alizadeh, A
    Sharma, P
    Ganti, S
    LeBoeuf, SF
    Tsakalakos, L
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8199 - 8206
  • [2] INFLUENCE OF BARRIER HEIGHT ON CARRIER DYNAMICS IN STRAINED INXGA1-XAS GAAS QUANTUM-WELLS
    BACHER, G
    SCHWEIZER, H
    KOVAC, J
    FORCHEL, A
    NICKEL, H
    SCHLAPP, W
    LOSCH, R
    [J]. PHYSICAL REVIEW B, 1991, 43 (11): : 9312 - 9315
  • [3] Block copolymers - Designer soft materials
    Bates, FS
    Fredrickson, GH
    [J]. PHYSICS TODAY, 1999, 52 (02) : 32 - 38
  • [4] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME
    BERGER, PR
    CHANG, K
    BHATTACHARYA, P
    SINGH, J
    BAJAJ, KK
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 684 - 686
  • [5] Special issue on optoelectronic devices based on quantum dots
    Bhattacharya, Pallab
    Bimberg, Dieter
    Arakawa, Yasuhiko
    [J]. PROCEEDINGS OF THE IEEE, 2007, 95 (09) : 1718 - 1722
  • [6] Fabrication of nanostructures with long-range order using block copolymer lithography
    Cheng, JY
    Ross, CA
    Thomas, EL
    Smith, HI
    Vancso, GJ
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3657 - 3659
  • [7] Process integration of self-assembled polymer templates into silicon nanofabrication
    Guarini, KW
    Black, CT
    Zhang, Y
    Kim, H
    Sikorski, EM
    Babich, IV
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2788 - 2792
  • [8] Cathodoluminescence study of highly ordered arrays of InGaAs quantum dots
    Guo, QX
    Mei, XY
    Ogawa, H
    Ruda, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (12): : 7297 - 7300
  • [9] Growth of highly ordered relaxed InAs/GaAs quantum dots on non-litho graphically patterned substrates by molecular beam epitaxy
    Guo, W
    Guico, RS
    Beresford, R
    Xu, JM
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 509 - 513
  • [10] Mechanisms of ordering in striped patterns
    Harrison, C
    Adamson, DH
    Cheng, ZD
    Sebastian, JM
    Sethuraman, S
    Huse, DA
    Register, RA
    Chaikin, PM
    [J]. SCIENCE, 2000, 290 (5496) : 1558 - 1560