Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

被引：5
|
作者：
Arivanandhan, Mukannan [1 ]
Gotoh, Raira [2 ]
Fujiwara, Kozo [2 ]
Uda, Satoshi [2 ]
Hayakawa, Yasuhiro [1 ]
Konagai, Makoto [3 ]
机构：
[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
SCRIPTA MATERIALIA | 2013年 / 69卷 / 09期
关键词：
Czochralski silicon; B and Ge co-doping; Grown-in microdefects; Minority carrier lifetime; DEFECTS; CELLS;
D O I：
10.1016/j.scriptamat.2013.07.033
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 x 10(20) cm(-3) and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (>= 3 x 10(20) cm(-3)) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：686 / 689
页数：4
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