Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

被引：5

作者：

Arivanandhan, Mukannan ^{[1
]}

Gotoh, Raira ^{[2
]}

Fujiwara, Kozo ^{[2
]}

Uda, Satoshi ^{[2
]}

Hayakawa, Yasuhiro ^{[1
]}

Konagai, Makoto ^{[3
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

SCRIPTA MATERIALIA | 2013年 / 69卷 / 09期

关键词：

Czochralski silicon; B and Ge co-doping; Grown-in microdefects; Minority carrier lifetime; DEFECTS; CELLS;

D O I：

10.1016/j.scriptamat.2013.07.033

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 x 10(20) cm(-3) and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (>= 3 x 10(20) cm(-3)) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：686 / 689

页数：4

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