Analysis of Junction Recombination of P-type Single Crystalline Silicon Solar Modules Affected by Potential Induced Degradation under non-STC

被引：0

作者：

Zhang, Junjun ^{[1
]}

Guo, Shuwen ^{[2
]}

Zhao, Pan ^{[3
]}

Chen, Chuanke ^{[2
]}

Wang, He ^{[2
]}

Yang, Hong ^{[2
]}

Huang, Jingsheng ^{[1
]}

Li, Hongtao ^{[1
]}

Dong, Yinghua ^{[1
]}

机构：

[1] China Elect Power Res Inst, State Key Lab Operat & Control Renewable Energy &, Beijing 100192, Peoples R China

[2] Xi An Jiao Tong Univ, Sch Sci, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Shaanxi, Peoples R China

[3] SPIC Xian Solar Power Co Ltd, Xian 710061, Shaanxi, Peoples R China

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

solar module; potential induced degradation; double-diode-model; light intensity; DECORATION;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Irradiance-dependent current-voltage (I-V) measurements have been used to study the junction recombination mechanisms in solar modules affected by potential induced degradation (PID). In this study, the double-diode-model was used to describe the PID-affected module's performance at low illuminations. The experimental results showed that PID strongly influenced the depletion region recombination behavior (J(02)) and ideality factor n(2). The J(02) and n(2) grow rapidly with the light intensity decreasing. However, J(01) is almost unaffected by PID and grows slightly with the light intensity decreasing. The result shows that the effect of PID on the junction recombination is more severe under weak light intensity.

引用

页码：0790 / 0793

页数：4

共 11 条

[1] ANALYTICAL METHODS FOR THE EXTRACTION OF SOLAR-CELL SINGLE-DIODE AND DOUBLE-DIODE MODEL PARAMETERS FROM IV CHARACTERISTICS [J].

CHAN, DSH ;

PHANG, JCH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :286-293

[2] A CRITICAL-STUDY OF THE EFFECTIVENESS OF THE SINGLE AND DOUBLE EXPONENTIAL MODELS FOR IV CHARACTERIZATION OF SOLAR-CELLS [J].

CHARLES, JP ;

MEKKAOUIALAOUI, I ;

BORDURE, G ;

MIALHE, P .

SOLID-STATE ELECTRONICS, 1985, 28 (08) :807-820

[3] Solar cell parameters extraction based on single and double-diode models: A review [J].

Hurnada, Ali M. ;

Hojabri, Mojgan ;

Mekhilef, Saad ;

Hamada, Hussein M. .

RENEWABLE & SUSTAINABLE ENERGY REVIEWS, 2016, 56 :494-509

[4] Power loss prognosis from thermographic images of PID affected silicon solar modules [J].

Kaden, Thomas ;

Lammers, Katrin ;

Moeller, Hans Joachim .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 142 :24-28

[5] Sodium decoration of PID-s crystal defects after corona induced degradation of bare silicon solar cells [J].

Naumann, Volker ;

Lausch, Dominik ;

Hagendorf, Christian .

5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 :397-401

[6] Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells [J].

Naumann, Volker ;

Lausch, Dominik ;

Haehnel, Angelika ;

Bauer, Jan ;

Breitenstein, Otwin ;

Graff, Andreas ;

Werner, Martina ;

Swatek, Sina ;

Grosser, Stephan ;

Bagdahn, Joerg ;

Hagendorf, Christian .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 :383-389

[7] POTENTIAL INDUCED DEGRADATION OF SOLAR CELLS AND PANELS [J].

Pingel, S. ;

Frank, O. ;

Winkler, M. ;

Daryan, S. ;

Geipel, T. ;

Hoehne, H. ;

Berghold, J. .

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :2817-2822

[8]

Rutschmann I., 2008, PHOTON, V1, P122

[9]

Swanson R., 2005, Proceedings of the 15th International Photovoltaic Science Engineering Conference, P410

[10] Performance variation of dark current density-voltage characteristics for PID-affected monocrystalline silicon solar modules from the field [J].

Wang, He ;

Zhao, Pan ;

Yang, Hong ;

Chang, Jipeng ;

Song, Dengyuan ;

Sang, Shiyu .

MICROELECTRONICS RELIABILITY, 2018, 81 :320-327

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