Determination of photoluminescence mechanism in InGaN quantum wells

被引：101
作者：
Riblet, P
Hirayama, H
Kinoshita, A
Hirata, A
Sugano, T
Aoyagi, Y
机构：
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Waseda Univ, Shinjuku Ku, Tokyo 1698555, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期
关键词：
D O I：
10.1063/1.124977
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained. (C) 1999 American Institute of Physics. [S0003-6951(99)00241-7].
引用
收藏
页码：2241 / 2243
页数：3
相关论文
共 24 条
  • [1] EXCITON BINDING-ENERGY IN QUANTUM WELLS
    BASTARD, G
    MENDEZ, EE
    CHANG, LL
    ESAKI, L
    [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
  • [2] Luminescences from localized states in InGaN epilayers
    Chichibu, S
    Azuhata, T
    Sota, T
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2822 - 2824
  • [3] Chichibu SF, 1999, MRS INTERNET J N S R, V4
  • [4] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
    Cho, YH
    Gainer, GH
    Fischer, AJ
    Song, JJ
    Keller, S
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1370 - 1372
  • [5] Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
    Della Sala, F
    Di Carlo, A
    Lugli, P
    Bernardini, F
    Fiorentini, V
    Scholz, R
    Jancu, JM
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (14) : 2002 - 2004
  • [6] Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
    Domen, K
    Kuramata, A
    Tanahashi, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (11) : 1359 - 1361
  • [7] ''Blue'' temperature-induced shift and band-tail emission in InGaN-based light sources
    Eliseev, PG
    Perlin, P
    Lee, JY
    Osinski, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (05) : 569 - 571
  • [8] PHONON BROADENING OF EXCITONS IN GAAS/ALXGA1-XAS QUANTUM-WELLS
    GAMMON, D
    RUDIN, S
    REINECKE, TL
    KATZER, DS
    KYONO, CS
    [J]. PHYSICAL REVIEW B, 1995, 51 (23): : 16785 - 16789
  • [9] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells
    Im, JS
    Kollmer, H
    Off, J
    Sohmer, A
    Scholz, F
    Hangleiter, A
    [J]. PHYSICAL REVIEW B, 1998, 57 (16) : R9435 - R9438
  • [10] Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells
    Kim, HS
    Lin, JY
    Jiang, HX
    Chow, WW
    Botchkarev, A
    Morkoç, H
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (23) : 3426 - 3428
123