Local structure studies of CoFeMnX (X = Si and Ge) Heusler alloys using X-ray absorption spectroscopy

被引：25

作者：

Bainsla, Lakhan ^{[1
]}

Yadav, A. K. ^{[2
]}

Venkateswara, Y. ^{[1
]}

Jha, S. N. ^{[2
]}

Bhattacharyya, D. ^{[2
]}

Suresh, K. G. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[2] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Mumbai 400094, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 651卷

关键词：

Spin gapless semiconductor; Heusler alloys; half-metallic ferromagnetic; EXAFS;

D O I：

10.1016/j.jallcom.2015.08.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we report the local structure studies in CoFeMnX (X = Si and Ge) Heusler alloys using extended X-ray absorption fine structure (EXAFS) measurements. CoFeMnGe (CFMG) is found to exist in a well-ordered LiMgPdSn structure, while a large amount of antisite disorder is observed for CoFeMnSi (CFMS). CFMG is half-metallic ferromagnetic in nature, while CFMS is a spin gapless semiconductor (SGS). The presence of well-ordered crystal structure is an essential requirement to obtain high spin polarization in half-metallic materials, while SGS materials are supposed to be robust against chemical disorder. The fact that CFMS shows a high spin polarization of 64% even when having a high degree of disorder confirms that the SGS materials are robust against structural disorder. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：509 / 513

页数：5

共 25 条

[11] Magneto-transport and microstructure of Co2Fe(Ga0.5Ge0.5)/Cu lateral spin valves prepared by top-down microfabrication process [J].

Ikhtiar ;

Kasai, S. ;

Itoh, A. ;

Takahashi, Y. K. ;

Ohkubo, T. ;

Mitani, S. ;

Hono, K. .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)

[12] Highly spin-polarized materials and devices for spintronics [J].

Inomata, Koichiro ;

Ikeda, Naomichi ;

Tezuka, Nobuki ;

Goto, Ryogo ;

Sugimoto, Satoshi ;

Wojcik, Marek ;

Jedryka, Eva .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, 9 (01)

[13] Element-specific magnetic moments and spin-resolved density of states in CoFeMnZ (Z = Al, Ga; Si, Ge) [J].

Klaer, P. ;

Balke, B. ;

Alijani, V. ;

Winterlik, J. ;

Fecher, G. H. ;

Felser, C. ;

Elmers, H. J. .

PHYSICAL REVIEW B, 2011, 84 (14)

[14]

Konigsberger D. C., 1988, XRAY ABSORPTION PRIN

[15] Half-metallicity and Gilbert damping constant in Co2FexMn1-xSi Heusler alloys depending on the film composition [J].

Kubota, Takahide ;

Tsunegi, Sumito ;

Oogane, Mikihiko ;

Mizukami, Shigemi ;

Miyazaki, Terunobu ;

Naganuma, Hiroshi ;

Ando, Yasuo .

APPLIED PHYSICS LETTERS, 2009, 94 (12)

[16] ANALYSIS OF MULTIPLE-SCATTERING XAFS DATA USING THEORETICAL STANDARDS [J].

NEWVILLE, M ;

RAVEL, B ;

HASKEL, D ;

REHR, JJ ;

STERN, EA ;

YACOBY, Y .

PHYSICA B, 1995, 208 (1-4) :154-156

[17] Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl [J].

Ouardi, Siham ;

Fecher, Gerhard H. ;

Felser, Claudia ;

Kuebler, Juergen .

PHYSICAL REVIEW LETTERS, 2013, 110 (10)

[18] Slater-Pauling behavior in LiMgPdSn-type multifunctional quaternary Heusler materials: Half-metallicity, spin-gapless and magnetic semiconductors [J].

Ozdogan, K. ;

Sasioglu, E. ;

Galanakis, I. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)

[19] Role of structural defects on the half-metallic character of Co2MnGe and Co2MnSi Heusler alloys -: art. no. 094423 [J].

Picozzi, S ;

Continenza, A ;

Freeman, AJ .

PHYSICAL REVIEW B, 2004, 69 (09)

[20] Commissioning and First Results of Scanning Type EXAFS Beamline (BL-09) at INDUS-2 Synchrotron Source [J].

Poswal, A. K. ;

Agrawal, A. ;

Yadav, A. K. ;

Nayak, C. ;

Basu, S. ;

Kane, S. R. ;

Garg, C. K. ;

Bhattachryya, D. ;

Jha, S. N. ;

Sahoo, N. K. .

SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B, 2014, 1591 :649-651

← 1 2 3 →