Local structure studies of CoFeMnX (X = Si and Ge) Heusler alloys using X-ray absorption spectroscopy

被引:25
作者
Bainsla, Lakhan [1 ]
Yadav, A. K. [2 ]
Venkateswara, Y. [1 ]
Jha, S. N. [2 ]
Bhattacharyya, D. [2 ]
Suresh, K. G. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
[2] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Mumbai 400094, Maharashtra, India
关键词
Spin gapless semiconductor; Heusler alloys; half-metallic ferromagnetic; EXAFS;
D O I
10.1016/j.jallcom.2015.08.131
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, we report the local structure studies in CoFeMnX (X = Si and Ge) Heusler alloys using extended X-ray absorption fine structure (EXAFS) measurements. CoFeMnGe (CFMG) is found to exist in a well-ordered LiMgPdSn structure, while a large amount of antisite disorder is observed for CoFeMnSi (CFMS). CFMG is half-metallic ferromagnetic in nature, while CFMS is a spin gapless semiconductor (SGS). The presence of well-ordered crystal structure is an essential requirement to obtain high spin polarization in half-metallic materials, while SGS materials are supposed to be robust against chemical disorder. The fact that CFMS shows a high spin polarization of 64% even when having a high degree of disorder confirms that the SGS materials are robust against structural disorder. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:509 / 513
页数:5
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