Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

被引：56

作者：

Manzano, Cristina V. ^{[1
]}

Rojas, Adriana A. ^{[1
,2
]}

Decepida, Michelle ^{[1
,3
]}

Abad, Begona ^{[1
]}

Feliz, Yazmin ^{[1
,4
]}

Caballero-Calero, Olga ^{[1
]}

Borca-Tasciuc, Diana-Andra ^{[3
]}

Martin-Gonzalez, Marisol ^{[1
]}

机构：

[1] CSIC, IMM Inst Microelect Madrid CNM, Madrid 28760, Spain

[2] Rensselaer Polytech Inst, Dept Chem Engn, Troy, NY USA

[3] Rensselaer Polytech Inst, Mech Aerosp & Nucl Engn Dept, Troy, NY USA

[4] Rensselaer Polytech Inst, Dept Math, Troy, NY USA

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2013年 / 17卷 / 07期

基金：

美国国家科学基金会; 欧洲研究理事会;

关键词：

Semiconductors; Films; Pulsed electrodeposition; Constant electrodeposition; Bi2Te3; Thermoelectric properties; BISMUTH TELLURIDE FILMS; DEPOSITION; ARRAYS;

D O I：

10.1007/s10008-013-2066-7

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bi2Te3 films have been grown by constant and pulsed electrochemical deposition. The pulsed deposition was carried out by alternating between a constant potential (potentiostatic mode) and an open circuit potential (galvanostatic mode, where current density is fixed at 0 mA/cm(2)). The Harris texture analysis was performed to determine the degree of preferred orientation. The results showed that the films were strongly oriented along (1 1 0) direction. The morphology and compositions of the films were then analyzed. Finally, their Seebeck coefficient and electrical resistivity were measured and used to determine the thermoelectric Power Factor of the films for a temperature range between 57 and 107 A degrees C.

引用

页码：2071 / 2078

页数：8

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