High-throughput computational screening of 2D materials for thermoelectrics

被引:50
作者
Sarikurt, Sevil [1 ,2 ]
Kocabas, Tugbey [3 ]
Sevik, Cem [2 ]
机构
[1] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35390 Izmir, Turkey
[2] Eskisehir Tech Univ, Dept Mech Engn, Fac Engn, TR-26555 Eskisehir, Turkey
[3] Eskisehir Tech Univ, Inst Grad Programs, Dept Mat Sci & Engn, TR-26555 Eskisehir, Turkey
关键词
TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; THERMAL-CONDUCTIVITY; TRANSPORT; ENHANCEMENT; PERFORMANCE; MXENES; STATE; POWER;
D O I
10.1039/d0ta04945j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-performance thermoelectric materials are critical in recuperating the thermal losses in various machinery and promising in renewable energy applications. In this respect, the search for novel thermoelectric materials has attracted considerable attention. In particular, low dimensional materials have been proposed as potential candidates due to their unique and controllable thermal and electronic transport properties. The considerable potential of several two-dimensional materials as thermoelectric devices has already been uncovered and many new candidates that merit further research have been suggested. In this regard, we comprehensively investigate the thermoelectric coefficients and electronic fitness function (EFF) of a large family of structurally isotropic and anisotropic two-dimensional layered materials using density functional theory combined with semi-classical Boltzmann transport theory. With this high-throughput screening, we bring to light additional 2D crystals that haven't been previously classified as favorable TE materials. We predict that Pb2Se2, GeS2, As-2, NiS2, Hf2O6, Zr2O6, AsBrS, ISbTe, ISbSe, AsISe, and AsITe are promising isotropic thermoelectric materials due to their considerably high EFF values. In addition to these materials, Hf2Br4, Zr2Br4, Hf2Cl4, Zr2Cl4, Hf2O6, Zr(2)O(6)and Os(2)O(4)exhibit strong anisotropy and possess prominently high EFF values.
引用
收藏
页码:19674 / 19683
页数:10
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