Synthesis of hafnium(IV) β-ketoiminates as potential precursors for the MOCVD of HfO2

被引：2

作者：

Gonzalez-Flores, Diego ^{[1
,2
]}

Patil, Siddappa A. ^{[3
,4
]}

Medina, Phillip A. ^{[4
]}

Dever, Seth ^{[3
]}

Uthaisar, Chananate ^{[4
]}

Pineda, Leslie W. ^{[1
,2
]}

Montero, Mavis L. ^{[1
,2
]}

Ziller, Joseph W. ^{[5
]}

Fahlman, Bradley D. ^{[3
,4
]}

机构：

[1] Univ Costa Rica, Ctr Elect Energia Quim CELEQ, San Jose, Costa Rica

[2] Univ Costa Rica, Escuela Quim, San Jose, Costa Rica

[3] Cent Michigan Univ, Dept Chem, Mt Pleasant, MI 48859 USA

[4] Cent Michigan Univ, Sci Adv Mat Program, Mt Pleasant, MI 48859 USA

[5] Univ Calif Irvine, Dept Chem, Irvine, CA 92697 USA

来源：

INORGANICA CHIMICA ACTA | 2013年 / 396卷

基金：

美国国家科学基金会;

关键词：

High-kappa dielectric; Hafnium compounds; Metal-organic chemical vapor deposition (MOCVD); Volatility; Sublimation enthalpy; Thermogravimetric analysis (TGA); CHEMICAL-VAPOR-DEPOSITION; BARIUM MOCVD; THIN-FILMS; COMPLEXES; DERIVATIVES; REACTIVITY;

D O I：

10.1016/j.ica.2012.10.002

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

An amine-elimination pathway has been used to produce two new hafnium compounds starting from the tetrakis(dimethylamido)hafnium(IV) complex and an amine - bis[(Z)-4-(2,6-dimethylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV) and [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV). The resulting complexes were characterized by single crystal X-ray diffraction and NMR. In addition, their volatilities were studied by thermogravimetric analysis (TGA), where [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV) showed better properties for MOCVD applications with a Delta H-sub of 27 kJ/mol and a T-sub of 104 degrees C. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：60 / 65

页数：6

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