Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals

被引：70

作者：

Lee, Jaeho ^{[1
]}

Bozorg-Grayeli, Elah ^{[1
]}

Kim, SangBum ^{[2
]}

Asheghi, Mehdi ^{[1
]}

Wong, H. -S. Philip ^{[3
]}

Goodson, Kenneth E. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

基金：

美国国家科学基金会;

关键词：

PHASE-CHANGE MEMORY; RANDOM-ACCESS MEMORY; THERMAL-CONDUCTIVITY; CONTACT RESISTANCE; RESISTIVITY; LIMIT;

D O I：

10.1063/1.4807141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

While atomic vibrations dominate thermal conduction in the amorphous and face-centered cubic phases of Ge2Sb2Te5, electrons dominate in the hexagonal closed-packed (hcp) phase. Here we separate the electron and phonon contributions to the interface and volume thermal resistances for the three phases using time-domain thermoreflectance and electrical contact resistance measurements. Even when electrons dominate film-normal volume conduction (i.e., 70% for the hcp phase), their contribution to interface heat conduction is overwhelmed by phonons for high-quality interfaces with metallic TiN. (C) 2013 AIP Publishing LLC.

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页数：5

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