High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

被引：3
|
作者：
Tran, L [1 ]
Isobe, R [1 ]
Delaney, M [1 ]
Rhodes, R [1 ]
Jang, D [1 ]
Brown, J [1 ]
Nguyen, L [1 ]
Le, M [1 ]
Thompson, M [1 ]
Liu, TY [1 ]
机构：
[1] HUGHES SPACE & COMMUN CO,EL SEGUNDO,CA
来源：
MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS | 1996年
关键词：
D O I：
10.1109/MCS.1996.506320
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：133 / 136
页数：4
相关论文
共 50 条
  • [1] High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs
    Tran, L
    Isobe, R
    Delaney, M
    Rhodes, R
    Jang, D
    Brown, J
    Nguyen, L
    Le, M
    Thompson, M
    Liu, TY
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 9 - 12
  • [2] 155 GHz MMIC LNAs with 12 dB gain fabricated using a high yield InP HEMT MMIC process
    TRW Electronic Space &, Technology Div, Redondo Beach, United States
    Microwave J, 9 (166, 168-171):
  • [3] Millimeter-wave flip-chip MMIC structure with high performance and high reliability interconnects
    Ito, M
    Maruhashi, K
    Kusamitsu, H
    Morishita, Y
    Ohata, K
    IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (11): : 2038 - 2043
  • [4] High performance millimeter wave 0.1 μm InPHEMT MMIC LNAs fabricated on 100 mm wafers
    Grundbacher, R
    Uyeda, J
    Lai, R
    Umemoto, D
    Liu, PH
    Barsky, M
    Cavus, A
    Lee, LJ
    Chen, J
    Gonzalez, J
    Chen, S
    Block, T
    Oki, A
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 284 - 287
  • [5] High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
    Harrouche, Kathia
    Kabouche, Riad
    Okada, Etienne
    Medjdoub, Farid
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 1145 - 1150
  • [6] High quality microstrip termination for MMIC and millimeter-wave applications
    Monje, RR
    Vassilev, V
    Pavolotsky, A
    Belitsky, V
    2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, 2005, : 1827 - 1830
  • [7] Optically Controllable Millimeter-Wave Oscillator Using InP-based HEMTs
    Murata, Hiroshi
    Kobayashi, Noriyo
    Kosugi, Toshihiko
    Enoki, Takatomo
    Okamura, Yasuyuki
    AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS, 2008, : 66 - +
  • [8] Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers
    Chevalier, P
    Dessenne, F
    Badirou, M
    Thobel, JL
    Fauquembergue, R
    EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 1997, : 193 - 198
  • [9] 0.33-MU-M MILLIMETER-WAVE INP-CHANNEL HEMTS WITH HIGH FT AND FMAX
    AINA, L
    BURGESS, M
    MATTINGLY, M
    OCONNOR, J
    MEERSCHAERT, A
    TONG, M
    KETTERSON, A
    ADESIDA, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2702 - 2702
  • [10] Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs
    del Alamo, JA
    Somerville, MH
    GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, : 7 - 10
12345