Pressure and Temperature Dependence of Local Structure and Electronic Structure of Orthorhombic DyMnO3

被引:2
|
作者
Chou, Ta-Lei [1 ]
Lee, Jenn-Min [1 ]
Chen, Shin-An [1 ,2 ]
Haw, Shu-Chih [1 ,2 ]
Huang, Eugene [3 ]
Lu, Kueih-Tzu [1 ]
Chen, Shi-Wei [1 ]
Deng, Ming-Jay [1 ]
Ishii, Hirofumi [1 ]
Hiraoka, Nozomu [1 ]
Lin, Chih-Ming [4 ]
Tsuei, Ku-Ding [1 ]
Chen, Jin-Ming [1 ]
机构
[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[2] Natl Tsing Hwa Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
[3] Chung Chou Inst Technol, Ctr Gen Educ, Changhua 510, Taiwan
[4] Natl Hsinchu Univ Educ, Dept Appl Sci, Hsinchu 30014, Taiwan
关键词
multiferroic DyMnO3; Jahn-Teller distortion; Raman scattering; x-ray absorption spectra; x-ray emission spectra; RAMAN PHONONS; TRANSITION; MULTIFERROICS; PR;
D O I
10.7566/JPSJ.82.064708
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The dependence on pressure and temperature of the local structure and electronic state for MnO6 octahedra in orthorhombic DyMnO3 is investigated with Raman scattering, lifetime-broadening-suppressed x-ray absorption spectra and x-ray emission spectra. With increasing pressure, all Raman-active modes of DyMnO3 persist and shift monotonically to greater wavenumbers, implying that no structural change occurs under an external pressure up to similar to 32 GPa. The spectral weight of the white line in Mn K-edge x-ray absorption spectra of DyMnO3 increased progressively, whereas the pre-edge feature gradually shifted to smaller energy upon increasing pressure. The Jahn-Teller distortion of MnO6 octahedra in DyMnO3 is progressively diminished with increasing pressure. The energy of the pre-edge line increased upon cooling from 300 to 10 K, in contrast with the pressure effect. A gradual breakdown of the high-spin state for MnO6 octahedra in DyMnO3 is observed. This work provides insight into structural modifications in highly distorted perovskite manganites under pressure and temperature.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Pressure and Temperature Dependence of Local Structure and Dynamics in an Ionic Liquid
    Lundin, Filippa
    Hansen, Henriette Wase
    Adrjanowicz, Karolina
    Frick, Bernhard
    Rauber, Daniel
    Hempelmann, Rolf
    Shebanova, Olga
    Niss, Kristine
    Matic, Aleksandar
    JOURNAL OF PHYSICAL CHEMISTRY B, 2021, 125 (10): : 2719 - 2728
  • [22] Ferroelectric ordering and magnetoelectric effect of pristine and Ho-doped orthorhombic DyMnO3 by dielectric studies
    Magesh, J.
    Murugavel, P.
    Mangalam, R. V. K.
    Singh, K.
    Simon, Ch.
    Prellier, W.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (07)
  • [23] Effects of Oxygen Partial Pressure and Tolerance Factor on Phase Selection of DyMnO3
    Shimomura, Kenta
    Kuribayashi, Kazuhiko
    Seimiya, Yusaku
    Shiratori, Suguru
    Ozawa, Shumpei
    MATERIALS TRANSACTIONS, 2023, 64 (12) : 2821 - 2825
  • [24] Effects of Oxygen Partial Pressure and Tolerance Factor on Phase Selection of DyMnO3
    Shimomura K.
    Kuribayashi K.
    Seimiya Y.
    Shiratori S.
    Ozawa S.
    Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, 2023, 87 (07): : 226 - 230
  • [25] PRESSURE DEPENDENCE OF ELECTRONIC STRUCTURE OF PALLADIUM
    DAS, SD
    MUELLER, FM
    KOELLING, DD
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 314 - &
  • [26] Studies of magnetic phase transitions in orthorhombic DyMnO3 ceramics prepared by acrylamide polymer gel template method
    Bhoi, Krishnamayee
    Dam, Tapabrata
    Mohapatra, S. R.
    Patidar, Manju Mishra
    Singh, Durgesh
    Sing, A. K.
    Vishwakarma, P. N.
    Babu, P. D.
    Siruguri, V
    Pradhan, Dillip K.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2019, 480 : 138 - 149
  • [27] TEMPERATURE DEPENDENCE OF ELECTRONIC STRUCTURE OF NIAL
    BARNES, GT
    GUSTAFSO.DR
    JORGENSE.D
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 445 - &
  • [28] Modelling the electronic structure of orthorhombic LaMnO3
    Gavin, Ailbhe L.
    Watson, Graeme W.
    SOLID STATE IONICS, 2017, 299 : 13 - 17
  • [29] Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature
    A. R. Degheidy
    A. M. Elabsy
    H. G. Abdelwahed
    E. B. Elkenany
    Indian Journal of Physics, 2012, 86 : 363 - 369
  • [30] Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature
    Degheidy, A. R.
    Elabsy, A. M.
    Abdelwahed, H. G.
    Elkenany, E. B.
    INDIAN JOURNAL OF PHYSICS, 2012, 86 (05) : 363 - 369