Defect Analysis Of CZTS Thin Films Using Photoluminescence Technique

被引：3

作者：

Poornima, N. ^{[1
]}

Rajeshmon, V. G. ^{[1
]}

Kartha, C. Sudha ^{[1
]}

Vijayakumar, K. P. ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India

来源：

SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷

关键词：

Photoluminescence; CZTS; defects;

D O I：

10.1063/1.4791112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) technique was used to identify defect levels in Copper Zinc Tin Sulphide (CZTS) thin films deposited using Chemical Spray Pyrolysis (CSP). Films were deposited for different Cu:Zn:Sn:S ratios. An emission was observed at 0.8 eV. It was monitored from 15K to room temperature and activation energy was calculated. Excitation power dependent studies were done to analyze the type of transition.

引用

页码：464 / 465

页数：2

共 3 条

[1] Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 [J].

Chen, Shiyou ;

Gong, X. G. ;

Walsh, Aron ;

Wei, Su-Huai .

APPLIED PHYSICS LETTERS, 2010, 96 (02)

[2] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].

ITO, K ;

NAKAZAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2094-2097

[3] Donor-acceptor pair recombination luminescence from Cu2ZnSnS4 bulk single crystals [J].

Tanaka, K. ;

Miyamoto, Y. ;

Uchiki, H. ;

Nakazawa, K. ;

Araki, H. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (11) :2891-2896

← 1 →