Effect of Magnetron Sputtering (RF and DC) Parameters on the TaB2 Films Structure

被引：0

作者：

Goncharov, A. A. ^{[1
]}

Zykov, A. V. ^{[2
]}

Shelest, I. V. ^{[1
]}

Yunda, A. N. ^{[1
]}

Yakovin, S. D. ^{[2
]}

Kuznetsov, V. N. ^{[1
,3
]}

Mikhalev, A. D. ^{[1
]}

Buranich, V. V. ^{[1
]}

机构：

[1] Sumy State Univ, 2 Rymskogo Korsakova St, UA-40007 Sumy, Ukraine

[2] Kharkov Natl Univ, 4 Svobody Sq, UA-61022 Kharkov, Ukraine

[3] Natl Acad Sci Ukraine, Inst Appl Phys, 58 Petropavlivska St, UA-40000 Sumy, Ukraine

来源：

INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2016年

关键词：

magnetron sputtering; tantalum diboride films; structure; bias potential; substrate; hardness; elastic modulus; B-N; HARD;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effect of bias potential applied to substrate on the structure of tantalum diboride films deposited by nonreactive RF-magnetron and unbalanced magnetron at direct current (DC) sputtering of TaB2 target in argon was investigated. It was shown that for both processes the value of the bias potential applied to the substrate is crucial to the films structure formation, which determines respectively their physical and mechanical properties.

引用

页数：4

共 18 条

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