Effect of bismuth addition on the optical band gap and extinction coefficient of thermally evaporated As-Se-Ge thin films

被引：0
|
作者：
Sharma, Pankaj [1 ]
Sharma, Vineet [1 ]
Barman, P. B. [1 ]
Katyal, S. C. [2 ]
机构：
[1] Jaypee Univ Informat Technol, Dept Phys, Waknaghat 173234, Solan, India
[2] Jaypee Inst Informat Technol, Dept Phys, Noida, Uttar Pradesh, India
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2012年 / 6卷 / 9-10期
关键词：
Chalcogenide glasses; Extinction coefficient; Optical band gap; CHALCOGENIDE GLASSES; PARAMETERS; SEMICONDUCTORS; DEPOSITION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chalcogenide glasses have shown potential application in non-linear optics along with IR applications. In present work, effect of bismuth (Bi) addition on the extinction coefficient (k) and optical band gap (E-g(opt)) of (As2Se3)(90)Ge-10 thin films has been investigated. A single transmission spectrum has been used for the determination of k and E-g(opt) The E-g(opt) decreases while k increases with Bi addition. Results have been explained on the basis of change in density of states at band gap edges and localized states.
引用
收藏
页码：804 / 806
页数：3
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