Sol-gel synthesis of ZnO transparent and conductive films: A critical approach

被引:55
|
作者
Tari, Orlando [1 ]
Aronne, Antonio [1 ]
Addonizio, Maria Luisa [2 ]
Daliento, Santolo [3 ]
Fanelli, Esther [1 ]
Pernice, Pasquale [1 ]
机构
[1] Univ Naples Federico II, Dept Mat & Prod Engn, I-80125 Naples, Italy
[2] Portici Res Ctr, ENEA, I-80055 Naples, Italy
[3] Univ Naples Federico II, Dept Elect Engn, I-80125 Naples, Italy
关键词
Crystal growth; Electrical resistivity; Optical bandgap; Photovoltaic applications; Thin films; OXIDE THIN-FILMS; OPTICAL-PROPERTIES; PREFERENTIAL ORIENTATION; PREFERRED ORIENTATION; STRUCTURAL-PROPERTIES; MICROSTRUCTURE; SEMICONDUCTORS; TEMPERATURE; GROWTH;
D O I
10.1016/j.solmat.2012.06.016
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The main aspects of the sot-gel synthesis of ZnO thin films were critically examined with particular reference to the optimization of the process parameters that influence specific properties of the films, such as the transparency, the crystallization behavior and the electrical resistivity. Starting from zinc acetate dihydrate, anhydrous ethanol and triethanolamine, a valuable sal-gel route was set. This route allowed the preparation of transparent ZnO thin films by dip-coating. Triethanolamine, thanks to its high chelating efficiency towards Zn2+, permitted to prepare stable zinc acetate dihydrate solutions wholly at room temperature. The structural, optical and morphological characteristics of the films were examined by glancing incidence X-ray diffraction, UV-vis spectroscopy and atomic force microscopy. Single layer films, with a thickness of about 120 nm, characterized by a high adhesion force (about 140 Kg cm(-2)), were obtained. The crystallization behavior of dip-coated amorphous films was explored in the 500-600 degrees C range; polycrystalline films, formed by randomly oriented ZnO nanocrystals (about 20 nm), with an average transmittance higher than 90% in the visible region, were obtained. Finally, a strong influence of annealing environment on electrical resistivity was observed. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:179 / 186
页数:8
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