Enhanced Performance of Benzothieno[3,2-b]thiophene (BTT)-Based Bottom-Contact Thin-Film Transistors

被引:42
作者
Huang, Peng-Yi [1 ]
Chen, Liang-Hsiang [2 ]
Chen, Yu-Yuan [1 ]
Chang, Wen-Jung [1 ]
Wang, Juin-Jie [1 ]
Lii, Kwang-Hwa [1 ]
Yan, Jing-Yi [2 ]
Ho, Jia-Chong [2 ]
Lee, Cheng-Chung [2 ]
Kim, Choongik [3 ]
Chen, Ming-Chou [1 ]
机构
[1] Natl Cent Univ, Dept Chem, Chung Li, South Korea
[2] Ind Technol Res Inst, Proc Technol Div, Display Technol Ctr, Hsinchu, Taiwan
[3] Sogang Univ, Dept Chem & Biomol Engn, Seoul 121742, South Korea
基金
新加坡国家研究基金会;
关键词
conjugation; semiconductors; thin films; thiophenes; transistors; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTOR; SUBSTITUTED PENTACENE; STABILITY; DERIVATIVES; POLYMER;
D O I
10.1002/chem.201204110
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Three new benzothieno[3,2-b]thiophene (BTT; 1) derivatives, which were end-functionalized with phenyl (BTT-P; 2), benzothiophenyl (BTT-BT; 3), and benzothieno[3,2-b]thiophenyl groups (BBTT; 4; dimer of 1), were synthesized and characterized in organic thin-film transistors (OTFTs). A new and improved synthetic method for BTTs was developed, which enabled the efficient realization of new BTT-based semiconductors. The crystal structure of BBTT was determined by single-crystal X-ray diffraction. Within this family, BBTT, which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p-channel characteristic, with a carrier mobility as high as 0.22cm2V1s1 and a current on/off ratio of 1x107, as well as good ambient stability for bottom-contact/bottom-gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.
引用
收藏
页码:3721 / 3728
页数:8
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