Atomic Layer Deposition of Antimony Telluride Thin Films using (Me3Si)2Te with SbCl3 as Precursors

被引：8

作者：

Gu, Diefeng ^{[1
,2
]}

Nminibapiel, David ^{[1
,2
]}

Baumgart, Helmut ^{[1
,2
]}

Robinson, Hans ^{[3
]}

Kochergin, Vladimir ^{[4
]}

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] Jefferson Natl Accelerator Facil, Appl Res Ctr, Newport News, VA 23606 USA

[3] Virginia Tech, Dept Phys, Blacksburg, VA 24060 USA

[4] MicroXact Inc, Blacksburg, VA 24060 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期

关键词：

D O I：

10.1149/1.3633675

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Atomic Layer Deposition (ALD) of antimony telluride (Sb2Te3) thin films has been investigated. We fabricated antimony telluride layers as a function of ALD temperature in order to establish the ALD process window using (Me3Si)(2)Te with SbCl3 as chemical precursors. The initial ALD nucleation of antimony telluride was found to follow the Vollmer-Weber island growth model. We found a strong dependence of the nucleation process on the chemical nature of substrate. Substrates covered with silicon dioxide interfaces worked significantly better compared to bare Si substrates for Sb2Te3 ALD. We present scanning electron microscopy and atomic force microscopy analysis of the resulting surface morphology of Sb2Te3, which is strongly influenced by the deposition temperature and recommend an ALD temperature window with optimized substrate surface coverage and improved Sb2Te3 surface texture.

引用

页码：255 / 261

页数：7

共 4 条

[1] Favourable photovoltaic effects in InGaN pin homojunction solar cell [J].