Electrostatic Detection of Shubnikov-de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate-Defined Quantum Dots

被引：10

作者：

Banszerus, Luca ^{[1
,2
,3
]}

Fabian, Thomas ^{[4
]}

Moeller, Samuel ^{[1
,2
,3
]}

Icking, Eike ^{[1
,2
,3
]}

Heiming, Henning ^{[1
,2
]}

Trellenkamp, Stefan ^{[5
]}

Lentz, Florian ^{[5
]}

Neumaier, Daniel ^{[6
,7
]}

Otto, Martin ^{[6
]}

Watanabe, Kenji ^{[8
]}

Taniguchi, Takashi ^{[9
]}

Libisch, Florian ^{[4
]}

Volk, Christian ^{[1
,2
,3
]}

Stampfer, Christoph ^{[1
,2
,3
]}

机构：

[1] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

[4] TU Wien, Inst Theoret Phys, A-1040 Vienna, Austria

[5] Forschungszentrum Julich, Helmholtz Nano Facil, D-52425 Julich, Germany

[6] AMO GmbH, Gesell Angew Mikro & Optoelekt, D-52074 Aachen, Germany

[7] Univ Wuppertal, Fak Elektrotech Informat Tech & Medientech, D-42285 Wuppertal, Germany

[8] Natl Inst Mat Sci, Funct Mat Res Ctr, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[9] Natl Inst Mat Sci, Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2020年 / 257卷 / 12期

基金：

欧洲研究理事会;

关键词：

bilayer graphene; quantum dots; Shubnikov-de Haas oscillations; BERRYS PHASE;

D O I：

10.1002/pssb.202000333

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive probe for the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, the charge carrier density in the channel is extracted, and from the amplitude the shift of the quantum dot potential. These experimental results are compared with an electrostatic simulation of the device and good agreement is found.

引用

页数：5

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