The role of the interface structure on the growth of nonpolar (10(1)over-bar0) and semipolar (11(2)over-bar(2)over-bar) ZnO on (112) LaAlO3 substrates

被引：3

作者：

Tian, Jr-Sheng ^{[1
]}

Wu, Yue-Han ^{[1
]}

Wang, Wei-Lin ^{[1
]}

Yen, Tzu-Chun ^{[1
]}

Ho, Yen-Teng ^{[1
]}

Chang, Li ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

MATERIALS LETTERS | 2013年 / 109卷

关键词：

Structural; Epitaxial growth; Interfaces; LaAlO3; ZnO; CHEMICAL-VAPOR-DEPOSITION; M-PLANE; SAPPHIRE; EPITAXY;

D O I：

10.1016/j.matlet.2013.07.069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of nonpolar (10 (1) over bar0) and semipolar (11 (2) over bar(2) over bar) ZnO on (112) LaAlO3 (LAO) substrates can be obtained by annealing the substrate surface in vacuum and oxygen ambient conditions prior to ZnO deposition, respectively. We investigated the origin of the two different growth relationships by inspecting their interface in atomic scale using high angle annular dark field scanning transmission electron microscopy. (10 (1) over bar0) ZnO was grown on flat (112)(LAO) surface due to the similar atomic configurations and small lattice mismatch between them at the interface, and (11 (2) over bar(2) over bar) ZnO was grown on a faceted surface with (001)(LAO) and (110)(LAO) facets on which accommodation growth of both (11 (2) over bar0) ZnO and (000 (1) over bar) ZnO are consistent with [1 (1) over bar 00](ZNO)//[1 (1) over bar0](LAO). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：237 / 239

页数：3

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