Surface doping in T6/PDI-8CN2 heterostructures investigated by transport and photoemission measurements

被引：13
作者：
Aversa, L. [1 ]
Verucchi, R. [1 ]
Tatti, R. [1 ]
Di Girolamo, F. V. [2 ,3 ]
Barra, M. [2 ,3 ]
Ciccullo, F. [2 ,3 ]
Cassinese, A. [2 ,3 ]
Iannotta, S. [1 ,4 ]
机构：
[1] IMEM CNR, Ist Mat Elettron & Magnetismo, Sez FBK Trento, I-38123 Trento, Italy
[2] Univ Naples Federico II, CNR SPIN, I-80125 Naples, Italy
[3] Univ Naples Federico II, Dept Phys Sci, I-80125 Naples, Italy
[4] IMEM CNR, Ist Mat Elettron & Magnetismo, I-43124 Parma, Italy
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期
关键词：
ENERGY-LEVEL ALIGNMENT; ELECTRONIC-STRUCTURE; LOSS SPECTROSCOPY; FILMS; INTERFACES; SEXITHIOPHENE; SEMICONDUCTORS; TRANSISTORS;
D O I：
10.1063/1.4769345
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we discuss the surface doping in sexithiophene (T6) organic field-effect transistors by N,N'-bis (n-octyl)-dicyanoperylenediimide (PDI-8CN(2)). We show that an accumulation heterojunction is formed at the interface between the organic semiconductors and that the consequent band bending in T6 caused by PDI-8CN(2) deposition can be addressed as the cause of the surface doping in T6 transistors. Several evidences of this phenomenon have been furnished both by electrical transport and photoemission measurements, namely, the increase in the conductivity, the shift of the threshold voltage, and the shift of the T6 highest occupied molecular orbital peak towards higher binding energies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769345]
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页数：5
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