Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

被引：25

作者：

He, L ^{[1
]}

Wang, SL ^{[1
]}

Yang, JR ^{[1
]}

Yu, MF ^{[1
]}

Wu, Y ^{[1
]}

Chen, XQ ^{[1
]}

Fang, WZ ^{[1
]}

Qiao, YM ^{[1
]}

Gui, YS ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Epitaxy Res Ctr Adv Mat, Shanghai 200083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

MBE; HgCdTe; annealing; dislocations;

D O I：

10.1016/S0022-0248(98)01395-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel approach of MBE in situ annealing of HgCdTe for the purposes of dislocation reduction and obtaining the required p-type electrical properties is described in the paper. To prevent surface re-evaporation during annealing in vacuum, double cap layers of CdTe and wide band gap material of ZnTe or ZnSe were grown on top of the NgCdTe, and their effects were studied. The surface EPD of HgCdTe grown on GaAs substrates was reduced to 2-4 x 10(6) cm-L by vacuum annealing at 390-450 degrees C. The relation between the hole concentration and annealing temperature was obtained, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：524 / 529

页数：6

共 12 条

[1]

[Anonymous], US Patent, Patent No. 4897152

[2] DISLOCATION DENSITY REDUCTION BY THERMAL ANNEALING OF HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].