A small signal model for Carbon Nanotube Field-Effect Transistor

被引：0

作者：

Zhang, Yuming ^{[1
]}

Yang, Tao ^{[1
]}

Yang, Yang ^{[2
]}

Xia, Lei ^{[1
]}

Xu, Ruimin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Chengdu, Sichuan, Peoples R China

[2] Nanjing Elect Devices Inst, Nanjing, Jiangsu, Peoples R China

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

关键词：

carbon nanotubes; CNTFET; small signal model; fabricated device; ac character;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new small signal model is presented to accurately describe the ac characteristics of carbon nanotube field-effect transistor (CNTFET). This model includes a new equivalent circuit that describes the effect of the Schottky barrier (SB) formed in the CNT and metal contact on ac small signal. The accumulation of charge in the channel is also considered while modeling the ballistic transport in intrinsic channels. The model has been implemented in SPICE-like environment, making it widely available across circuit simulators. Under multiple biases, the simulation results agree well with the measured data. Therefore, the topology of this model can be used to further build large-signal models.

引用

页码：366 / 368

页数：3

共 6 条

[1] Computationally efficient physics-based compact CNTFET model for circuit design [J].

Fregonese, Sebastien ;

d'Honincthun, Hugues Cazin ;

Goguet, Johnny ;

Maneux, Cristell ;

Zimmer, Thomas ;

Bourgoin, Jean-Philippe ;

Dollfus, Philippe ;

Galdin-Retailleau, Sylvie .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (06) :1317-1327

[2] High-performance carbon nanotube field-effect transistor with tunable Polarities [J].

Lin, YM ;

Appenzeller, J ;

Knoch, J ;

Avouris, P .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :481-489

[3] Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications [J].

Najari, Montassar ;

Fregonese, Sebastien ;

Maneux, Cristell ;

Mnif, Hassene ;

Masmoudi, Nouri ;

Zimmer, Thomas .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) :195-205

[4] A circuit-compatible model of ballistic carbon nanotube field-effect transistors [J].

Raychowdhury, A ;

Mukhopadhyay, S ;

Roy, K .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2004, 23 (10) :1411-1420

[5] A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications [J].

Schroeter, Michael ;

Haferlach, Max ;

Pacheco-Sanchez, Anibal ;

Mothes, Sven ;

Sakalas, Paulius ;

Claus, Martin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (01) :52-60

[6] Schottky barriers in carbon nanotube-metal contacts [J].

Svensson, Johannes ;

Campbell, Eleanor E. B. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

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