Effect of Ir content and sputtering conditions on unidirectional anisotropy of Ni-Fe/Mn-Ir films fabricated under the extremely clean sputtering process

被引：8

作者：

Yagami, K ^{[1
]}

Tsunoda, M

Sugano, S

Takahashi, M

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

[2] Sony Corp, CPC, Magnet Devices Div, Tagajyo 9850842, Japan

[3] Daido Steel Co LTD, Res & Dev Lab, Nagoya, Aichi 457, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

exchange anisotropy; extremely clean sputtering; Ir content; Mn-Ir; sputtering conditions;

D O I：

10.1109/20.800708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fabricated under the extremely clean sputtering process. We found that the unidirectional anisotropy constant J(K) monotonously increased with increasing the Ir content and decreasing the deposition rate of Mn-Ir films. The change of J(K) against the deposition late of Mn-Ir films Is possibly caused by the quite slight changes of the microstructure of Mn-Ir films, which were undetectable with XRD.

引用

页码：3919 / 3921

页数：3