Effects of ion energy on ion beam assisted deposition textured yttria stabilized zirconia buffer layer of coated conductor

被引：6

作者：

Wang, Z. ^{[1
]}

Shi, K. ^{[2
]}

Chen, H. ^{[2
]}

Feng, F. ^{[2
]}

Sun, J. C. ^{[2
]}

Han, Z. ^{[2
]}

机构：

[1] Beijing Inst Technol, Sch Sci, Dept Phys, Beijing 100081, Peoples R China

[2] Tsinghua Univ, Dept Phys, Appl Superconduct Res Ctr, Beijing 100084, Peoples R China

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 06期

关键词：

Ion beam assisted deposition; Yttria stabilized zirconia; Biaxial texture; Buffer layer; Coated conductor; X-ray diffraction; Surface morphology; MGO THIN-FILMS; BIAXIAL ALIGNMENT; MECHANISM; BOMBARDMENT; ORIENTATION; MODEL;

D O I：

10.1016/j.tsf.2008.10.071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality biaxially textured yttria stabilized zirconia (YSZ) thin films, as buffer layers of coated conductors, were deposited on hastelloy substrates by ion beam assisted deposition (IBAD) method with different assisting ion energy E-i. The roles of assisting ion beam and the influences of ion energy E-i on the structure of the films were Studied. It was found that both the out-of-plane alignment and in-plane texture of the IBAD-YSZ films are sensitive to the variation of E-i. The results are explained in the paper by different damage tolerance of the differently oriented grains to ion bombardment. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2044 / 2047

页数：4

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