InGaN-based quantum-well LEDs: Explanation of anomalous electro-optical characteristics

被引：0

作者：

Eliseev, PG ^{[1
]}

Lee, JY ^{[1
]}

Osinski, M ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 | 2005年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Charge transport and luminescence in InGaN-based short-wavelength light-emitting diodes feature some anomalies: 1) low-temperature quenching of luminescence yield; 2) very large ideality factor of I-V curves. These observations are explained in terms of electron ballistic overflow and injection-induced conductivity on p-side. (c) 2005 Optical Society of America

引用

页码：147 / 149

页数：3

共 5 条

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[5] Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
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[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2627 - 2630

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