Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

被引：15

作者：

Wang, Xiaowei ^{[1
,2
]}

Liang, Feng ^{[1
]}

Zhao, Degang ^{[1
,3
]}

Jiang, Desheng ^{[1
]}

Liu, Zongshun ^{[1
]}

Zhu, Jianjun ^{[1
,3
]}

Yang, Jing ^{[1
]}

Wang, Wenjie ^{[4
]}

机构：

[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[4] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 790卷

基金：

中国国家自然科学基金;

关键词：

InGaN/GaN MQW; Localization states; Dual-temperature growth; LOCALIZATION STATES; OPTICAL-PROPERTIES; EMISSION; BAND; GAN;

D O I：

10.1016/j.jallcom.2019.03.180

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Room-temperature electroluminescence spectra of InGaN/GaN multiple quantum well (MQW) structures grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) were investigated. It is found that, in comparison with the same-temperature growth of MQW layers, GaN barrier layers grown at a temperature higher than the well layer growth of 790 degrees C are beneficial to improve the emission intensity of InGaN/GaN MQWs. The XRD and AFM measurements show a better interface quality and less non-radiative recombination centers (trench defects) exist in the dual-temperaturegrown InGaN MQWs between InGaN well and GaN barrier layers. In addition, increasing barriers growth temperature will induce less concentration of deeper localization states which may contribute to a blue shift of EL emission wavelength. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：197 / 202

页数：6

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