The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.

被引：0

作者：

Hong Quan Nguyen ^{[1
]}

Hai Dang Trinh ^{[1
]}

Yu, Hung Wei ^{[1
]}

Hsu, Ching Hsiang ^{[1
]}

Chung, Chen Chen ^{[1
]}

Binh Tinh Tran ^{[1
]}

Wong, Yuen Yee ^{[1
]}

Thanh Hoa Phan Van ^{[1
]}

Quang Ho Luc ^{[1
]}

Chiou, Diao Yuan ^{[1
]}

Chi Lang Nguyen ^{[1
]}

Dee, Chang Fu ^{[1
]}

Chang, Edward Yi ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2012年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Growth conditions have investigated for growing high quality In0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2x10(6) cm(-2) was achieved at growth temperature of 490 degrees C. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.

引用

页码：246 / 248

页数：3

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