Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

被引:1
作者
Bilenko, D. I. [1 ]
Belobrovaya, O. Ya. [1 ]
Terin, D. V. [1 ]
Galushka, V. V. [1 ]
Galushka, I. V. [1 ]
Zharkova, E. A. [1 ]
Polyanskaya, V. P. [1 ]
Sidorov, V. I. [1 ]
Yagudin, I. T. [1 ]
机构
[1] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
关键词
RAMAN-SPECTRA; PHOTOLUMINESCENCE; CRYSTALS;
D O I
10.1134/S1063782618030077
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of gamma photons from a Ra-226 radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.
引用
收藏
页码:331 / 334
页数:4
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