Investigation of temperature approximation methods during flash sintering of ZnO

The lattice expansion in ZnO, using in-situ X ray diffraction, has been investigated during flash sintering with varying current densities. While current flow through the specimen enhances the kinetics of sintering for ZnO, the temperature is not high enough to claim thermal runaway or localized melting. Unlike the case of yttria stabilized zirconia [1,2], experimental temperature approximations predict comparable specimen temperature to conventional sintering temperature of ZnO. Microstructural analysis supports the findings of the in-situ temperature approximations. In comparison with black body radiation, a gap between theoretical value and measured value was found due to flaws in the theoretical model. In addition, a new type of flash sintering was introduced, with current ramp, to avoid the power spike which has been the source of much debate about the transition from voltage to current control. The advantage of this method is in the controlled sintering kinetics thus avoiding the channeling found in dielectric materials [3].