Twisting Bilayer Graphene Superlattices

被引:185
|
作者
Lu, Chun-Chieh [1 ]
Lin, Yung-Chang [1 ]
Liu, Zheng [2 ]
Yeh, Chao-Hui [1 ]
Suenaga, Kazu [2 ]
Chiu, Po-Wen [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
关键词
twisted bilayer graphene; single crystal; Raman; TEM; LARGE-AREA; GROWTH; FILMS; NUCLEATION; GRAINS;
D O I
10.1021/nn3059828
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bilayer graphene is an intriguing material In that its electronic structure can be altered by changing the stacking order or the relative twist angle, yielding a new class of low-dimensional carbon system. Twisted bilayer graphene can be obtained by (I) thermal decomposition of SIC; (ii) chemical vapor deposition (CVD) on metal catalysts; (iii) folding graphene; or (iv) stacking graphene layers one atop the other, the latter of which suffers from interlayer contamination. Existing synthesis protocols, however, usually result in graphene with polycrystalline structures. The present study investigates bilayer graphene grown by ambient pressure (VD on polycrystalline Cu. Controlling the nucleation in early stage growth allows the constituent layers to form single hexagonal crystals. New Raman active modes are shown to result from the twist, with the angle determined by transmission electron microscopy. The successful growth of single-crystal bilayer graphene provides an attractive jumping-off point for systematic studies of interlayer coupling in misoriented few-layer graphene systems with well-defined geometry.
引用
收藏
页码:2587 / 2594
页数:8
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