Influence of native defects on polytypism in SiC

被引：18

作者：

Lebedev, AA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 07期

关键词：

Silicon; Experimental Data; Carbide; Magnetic Material; Silicon Carbide;

D O I：

10.1134/1.1187764

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analysis of experimental data on the influence of native defects of the crystalline lattice on polytypism in silicon carbide has been performed. A simple analytical expression, which links the degree of hexagonality of the polytype with the concentration of carbon and silicon vacancies, was obtained. The possible dependence of the model parameters on the experimental conditions is investigated. (C) 1999 American Institute of Physics. [S1063-7826(99)00107-6].

引用

页码：707 / 709

页数：3

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