Pressure-induced metal-insulator transitions in chalcogenide NiS2-xSex

被引:3
作者
Hussain, Tayyaba [1 ]
Oh, Myeong-jun [1 ]
Nauman, Muhammad [1 ]
Jo, Younjung [1 ]
Han, Garam [2 ]
Kim, Changyoung [2 ]
Kang, Woun [3 ]
机构
[1] Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
[2] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
[3] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea
关键词
NiS1.9Se0.1; rho(T) measurements; Magnetic measurements; Metal-insulator transition (MIT); Magnetic phase transition; Non-Fermi-liquid behavior; SINGLE-CRYSTALS; ELECTRONIC-STRUCTURE; MOTT INSULATOR; NIS2;
D O I
10.1016/j.physb.2017.11.032
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report the temperature-dependent resistivity rho(T) of chalcogenide NiS2-xSex (x = 0.1) using hydrostatic pressure as a control parameter in the temperature range of 4-300 K. The insulating behavior of.(T) survives at low temperatures in the pressure regime below 7.5 kbar, whereas a clear insulator-to-metallic transition is observed above 7.5 kbar. Two types of magnetic transitions, from the paramagnetic (PM) to the antiferromagnetic (AFM) state and from the AFM state to the weak ferromagnetic (WF) state, were evaluated and confirmed by magnetization measurement. According to the temperature-pressure phase diagram, the WF phase survives up to 7.5 kbar, and the transition temperature of the WF transition decreases as the pressure increases, whereas the metal-insulator transition temperature increases up to 9.4 kbar. We analyzed the metallic behavior and proposed Fermi-liquid behavior of NiS1.9Se0.1.
引用
收藏
页码:235 / 238
页数:4
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