Field-effect surface chemistry: chemical reactions on two-dimensional materials controlled by field-effect transistor configurations

被引:1
作者
Nouchi, Ryo [1 ,2 ,3 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect, Dept Phys & Elect, Sakai 5998570, Japan
[2] Osaka Metropolitan Univ, Osaka Metropolitan Univ, Dept Phys & Elect, Sakai 5998570, Japan
[3] PRESTO, Japan Sci & Technol Agcy, Kawaguchi 3320012, Japan
来源
NANO EXPRESS | 2022年 / 3卷 / 02期
关键词
surface chemical reaction; field-effect transistor; two-dimensional material; graphene; SELF-ASSEMBLED MONOLAYERS; GRAPHENE; DISSOCIATION; MOLECULES; TIP;
D O I
10.1088/2632-959X/ac603f
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Because chemical reactions are largely governed by the movement of electrons, it is possible to control chemical reactions using electronic devices that provide functionality by controlling the movement of electrons in a solid. In this perspective, we discuss the concept of 'field-effect surface chemistry,' which controls chemical reactions on two-dimensional materials using field-effect transistors (FETs), a representative electronic device. The electrical voltages to be applied for the FET operation are the gate voltage and drain voltage. The former is expected to control the Fermi level and exert the effect of the electric field directly on the reactants, while the latter is expected to provide local heating by Joule heat and energy transfer to the reactants. Further, we discuss a sample structure that does not require any voltage but has the same effect as the gate voltage.
引用
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页数:7
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