Variable Inductors in CMOS for Millimeter-Wave Applications

被引：4
|
作者：
Yun, Yang-Hun [1 ]
Kao, Te-Yu J. [2 ]
Kenneth, K. O. [1 ]
机构：
[1] Univ Texas Dallas, Texas Analog Ctr Excellence, Richardson, TX 75080 USA
[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期
关键词：
CMOS; millimeter wave; variable inductor;
D O I：
10.1109/LED.2012.2196966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transformer-based variable inductors usable up to similar to 77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of similar to 4 for MOS varactors which is an alternate tunable element. This indicates that variable inductors with useful tuning range and sufficiently high Q can be realized in CMOS for use in millimeter-wave circuits.
引用
收藏
页码：1081 / 1083
页数：3
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