Ultra-thin titanium oxide

被引:24
作者
Bareiss, M. [1 ]
Kaelblein, D. [2 ]
Jirauschek, C. [1 ]
Exner, A. [1 ]
Pavlichenko, I. [3 ]
Lotsch, B. [3 ]
Zschieschang, U. [2 ]
Klauk, H. [2 ]
Scarpa, G. [1 ]
Fabel, B. [1 ]
Porod, W. [4 ]
Lugli, P. [1 ]
机构
[1] Tech Univ Munich, Inst Nanoelect, Munich, Germany
[2] Max Planck Inst Solid State Res, Stuttgart, Germany
[3] Univ Munich, Dept Chem, Munich, Germany
[4] Univ Notre Dame, Ctr Nano Sci & Technol, Notre Dame, IN 46556 USA
关键词
FILMS; TIO2;
D O I
10.1063/1.4745651
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the fabrication of ultra-thin titanium oxide films by plasma-induced surface oxidation. Ellipsometry measurements indicate an oxide thickness of about 2 nm. Electrical characterization was performed on microscale and nanoscale metal-insulator-metal tunneling diodes. Electrical fields up to 22 MV/cm were applied without destroying the titanium oxide films. The current-voltage-characteristic of the diodes are found to be asymmetric with respect to zero bias when employing electrodes with different work functions. The permittivity of the ultra-thin titanium oxide was determined to be less than 6, which is the smallest permittivity that has been reported for titanium oxide. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745651]
引用
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页数:4
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