Quantum-confined stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates

被引：0
|
作者：
Kuo, YH [1 ]
Lee, Y [1 ]
Ren, S [1 ]
Ge, Y [1 ]
Miller, DAB [1 ]
Harris, JS [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | 2005年
关键词：
D O I：
10.1109/LEOS.2005.1547990
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
引用
收藏
页码：284 / 285
页数：2
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