Evaluation of a MOSFET radiation sensor for the measurement of entrance surface dose in diagnostic radiology

被引:59
作者
Peet, DJ [1 ]
Pryor, MD [1 ]
机构
[1] Royal Surrey Cty Hosp, Reg Radiat Protect Serv, Guildford GU2 5XX, Surrey, England
关键词
D O I
10.1259/bjr.72.858.10560338
中图分类号
R8 [特种医学]; R445 [影像诊断学];
学科分类号
1002 ; 100207 ; 1009 ;
摘要
A patient dosimetry system using MOSFET technology (Thomson and Neilson Electronics Ltd, Canada) is evaluated for entrance surface dose measurements in diagnostic radiology. The system sensitivity for the standard MOSFET detector coupled to a high sensitivity bias supply was measured to be 1 mV mCy(-1). Response of a new high sensitivity dosemeter was measured to be 3 mV mGy(-1). The minimum detectable entrance surface dose at which a single measurement can be made with less than 25% total uncertainty at the 95% confidence level was estimated to be 4 mGy for the standard dosemeter and 1.5 mGy for the new high sensitivity dosemeter. The dosemeters were found to be linear with absorbed dose in air, linear with dose rate and reproducible, although they showed some energy dependence across the diagnostic energy range. The system is also compared with thermoluminescent dosimetry (TLD) as a tool for the measurement of entrance surface dose in diagnostic radiology. MOSFET detectors are considered to have advantages over TLD dosemeters with the instant readout of entrance surface dose. These dosemeters do have the disadvantage that they are visible in radiographs, they have a finite shelf life and can only accumulate absorbed dose up to a limiting value after which the dosemeters can no longer be used.
引用
收藏
页码:562 / 568
页数:7
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