Synthesis and formation mechanisms of BaZrO3 thin films prepared on ZrN-coated substrates by a low temperature hydrothermal-galvanic couple method

被引:6
作者
Teng, Huan-Ping [1 ]
Wu, Hsiao-Hung [1 ]
Lu, Fu-Hsing [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Sci Engn, 250 Kuo Kuang Rd, Taichung 402, Taiwan
关键词
Barium zirconate; Zirconium nitride; Thin films; Galvanic couple; Hydrothermal deposition; DIELECTRIC-PROPERTIES; GROWTH; MICROSTRUCTURE; METAL; TIN;
D O I
10.1016/j.tsf.2016.02.045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Barium zirconate (BaZrO3; BZO) films exhibiting superior physical and chemical properties were synthesized over ZrN-coated Si substrates by a low temperature hydrothermal-galvanic couple method. Firstly, ZrN thin films were deposited onto Si by unbalanced magnetron sputtering. Subsequently, the ZrN-coated Si substrates were soaked in 0.5 M Ba(OH)(2) mixed with various molar concentrations of NaOH at 90 degrees C for different reaction times by aid of a galvanic couple setup. Although no external power sources were applied, pronounced galvanic currents were detected during the synthesis and revealed a very different plateau behavior. X-ray diffraction patterns show that cubic crystalline BZO films were formed on ZrN/Si in highly alkaline solutions for sufficient reaction time. Amorphous nano-layered oxides were present at lower-pH solutions. Aided by galvanic effects, more OH- ions in the solution and longer reaction time would facilitate formation of a dense crystalline BZO. Reaction routes and formation mechanisms of the BZO films have been proposed. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:224 / 230
页数:7
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