High performance infra-red detectors based on Si/SiGe multilayers quantum structure

被引：7

作者：

Kolahdouz, M. ^{[1
]}

Ostling, M. ^{[1
]}

Radamson, H. H. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16640 Kista, Sweden

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 17期

关键词：

Infrared; Detector; SiGe; TCR; SNR; Quantum; Sensor; BOLOMETERS;

D O I：

10.1016/j.mseb.2011.10.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently. single crystalline (Sc) Si/SiGe multi quantum structure has been recognized as a new low-cost thermistor material for IR detection. Higher signal-to-noise (SNR) ratio and temperature coefficient of resistance (TCR) than existing thermistor materials have converted it to a candidate for infrared (IR) detection in night vision applications. In this study, the effects of Ge content, C doping and the Ni silicidation of the contacts on the performance of SiGe/Si thermistor material have been investigated. Finally, an uncooled thermistor material with TCR of -4.5%/K for 100 pm x 100 mu m pixel sizes and low noise constant (K-1/f) value of 4.4 x 10(-15) is presented. The outstanding performance of the devices is due to Ni silicide contacts, smooth interfaces, and high quality multi quantum wells (MQWs) containing high Ge content. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1563 / 1566

页数：4

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