Generating robust two-dimensional hole gas at the interface between boron nitride and diamond

被引：0

作者：

Wu, Kongping ^{[1
]}

Gan, Liyong ^{[2
,3
]}

Zhang, Leng ^{[1
]}

Zhang, Pengzhan ^{[1
]}

Liu, Fei ^{[1
]}

Fan, Jing ^{[4
]}

Sang, Liwen ^{[5
]}

Liao, Meiyong ^{[5
]}

机构：

[1] Jinling Inst Technol, Sch Elect & Informat Engn, Nanjing 211169, Jiangsu, Peoples R China

[2] Chongqing Univ, Inst Struct & Funct, Chongqing 400030, Peoples R China

[3] Chongqing Univ, Dept Phys, Chongqing 400030, Peoples R China

[4] Southern Univ Sci & Technol, ChinaCtr Computat Sci & Engn, Shenzhen 518055, Peoples R China

[5] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Diamond; Two-dimensional hole gas; Band alignment; Surface transfer doping; First principle calculations; ELECTRONIC-PROPERTIES; FILMS;

D O I：

10.35848/1347-4065/abb20c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 x 10(12) cm(-2), and the hole mobility is as high as 924 cm(2)V(-1) s(-1). The intrinsic electron-deficiency nature of the interfacial carbon-boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.

引用

页数：4

共 50 条

[41] Prediction of a mobile two-dimensional electron gas at the LaScO3/BaSnO3(001) interface [J].

Paudel, Tula R. ;

Tsymbal, Evgeny Y. .

PHYSICAL REVIEW B, 2017, 96 (24)

[42] Experimental study on interface region of two-dimensional Si layers by forming gas annealing [J].

Mizuno, Tomohisa ;

Suzuki, Yuhya ;

Kikuchi, Reika ;

Suzuki, Ayaka ;

Inoue, Ryohsuke ;

Yamanaka, Masahiro ;

Yokoyama, Miki ;

Nagamine, Yoshiki ;

Aoki, Takashi ;

Maeda, Tatsuro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)

[43] Fermiology of two-dimensional titanium carbide and nitride MXenes [J].

Bagheri, Mohammad ;

Ibragimova, Rina ;

Komsa, Hannu-Pekka .

PHYSICAL REVIEW B, 2021, 104 (03)

[44] Two-Dimensional Boron Monolayers Mediated by Metal Substrates [J].

Zhang, Zhuhua ;

Yang, Yang ;

Gao, Guoying ;

Yakobson, Boris I. .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (44) :13022-13026

[45] Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond [J].

Zhang, Jin-Feng ;

Zhang, Jin-Cheng ;

Ren, Ze-Yang ;

Su, Kai ;

Hao, Yue .

Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2024, 52 (06) :2151-2160

[46] Two-dimensional electron gas and its electric control at the interface between ferroelectric and antiferromagnetic insulator studied from first principles [J].

Borisov, Vladislav ;

Ostanin, Sergey ;

Mertig, Ingrid .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (19) :12812-12825

[47] New insights into the interactions between two-dimensional ice and two-dimensional materials [J].

Quoc Huy Thi ;

Zhao, Jiong ;

Thuc Hue Ly .

DROPLET, 2023, 2 (04)

[48] Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET [J].

Iwataki, Masayuki ;

Oi, Nobutaka ;

Horikawa, Kiyotaka ;

Amano, Shotaro ;

Nishimura, Jun ;

Kageura, Taisuke ;

Inaba, Masafumi ;

Hiraiwa, Atsushi ;

Kawarada, Hiroshi .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (01) :111-114

[49] Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface [J].

Cao, Cheng ;

Chen, Shengru ;

Deng, Jun ;

Li, Gang ;

Zhang, Qinghua ;

Gu, Lin ;

Ying, Tian-Ping ;

Guo, Er-Jia ;

Guo, Jian-Gang ;

Chen, Xiaolong .

CHINESE PHYSICS LETTERS, 2022, 39 (04)

[50] Two-dimensional contour cutting of polycrystalline cubic boron nitride using a novel laser/water jet hybrid process [J].

Melaibari, Ammar ;

Molian, Pal ;

Shrotriya, Pranav .

INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2012, 63 (5-8) :641-649

← 1 2 3 4 5 →