Generating robust two-dimensional hole gas at the interface between boron nitride and diamond

被引：1
作者：
Wu, Kongping [1 ]
Gan, Liyong [2 ,3 ]
Zhang, Leng [1 ]
Zhang, Pengzhan [1 ]
Liu, Fei [1 ]
Fan, Jing [4 ]
Sang, Liwen [5 ]
Liao, Meiyong [5 ]
机构：
[1] Jinling Inst Technol, Sch Elect & Informat Engn, Nanjing 211169, Jiangsu, Peoples R China
[2] Chongqing Univ, Inst Struct & Funct, Chongqing 400030, Peoples R China
[3] Chongqing Univ, Dept Phys, Chongqing 400030, Peoples R China
[4] Southern Univ Sci & Technol, ChinaCtr Computat Sci & Engn, Shenzhen 518055, Peoples R China
[5] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Diamond; Two-dimensional hole gas; Band alignment; Surface transfer doping; First principle calculations; ELECTRONIC-PROPERTIES; FILMS;
D O I：
10.35848/1347-4065/abb20c
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 x 10(12) cm(-2), and the hole mobility is as high as 924 cm(2)V(-1) s(-1). The intrinsic electron-deficiency nature of the interfacial carbon-boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.
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页数：4
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