Generating robust two-dimensional hole gas at the interface between boron nitride and diamond

被引：1

作者：

Wu, Kongping ^{[1
]}

Gan, Liyong ^{[2
,3
]}

Zhang, Leng ^{[1
]}

Zhang, Pengzhan ^{[1
]}

Liu, Fei ^{[1
]}

Fan, Jing ^{[4
]}

Sang, Liwen ^{[5
]}

Liao, Meiyong ^{[5
]}

机构：

[1] Jinling Inst Technol, Sch Elect & Informat Engn, Nanjing 211169, Jiangsu, Peoples R China

[2] Chongqing Univ, Inst Struct & Funct, Chongqing 400030, Peoples R China

[3] Chongqing Univ, Dept Phys, Chongqing 400030, Peoples R China

[4] Southern Univ Sci & Technol, ChinaCtr Computat Sci & Engn, Shenzhen 518055, Peoples R China

[5] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Diamond; Two-dimensional hole gas; Band alignment; Surface transfer doping; First principle calculations; ELECTRONIC-PROPERTIES; FILMS;

D O I：

10.35848/1347-4065/abb20c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 x 10(12) cm(-2), and the hole mobility is as high as 924 cm(2)V(-1) s(-1). The intrinsic electron-deficiency nature of the interfacial carbon-boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.

引用

页数：4

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