Non-volatile memories based on Si+-implanted gate oxides

被引：14
作者：
Gebel, T
von Borany, J
Thees, HJ
Wittmaack, M
Stegemann, KH
Skorupa, W
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Nanoparc GmbH, D-01454 Dresden, Germany
[3] Zentrum Mikroelektron Dresden AG, D-01109 Dresden, Germany
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
nanocrystal; ion implantation; non-volatile memory;
D O I：
10.1016/S0167-9317(01)00634-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical properties of 20-30 nm gate oxides implanted with Si+ ions are investigated using MOS capacitors and transistors. The observed programming window can reach several volts and the devices exhibit good retention behavior. A first 256 k - nvSRAM is demonstrated showing a programming window >1 V for write pulses of 12 V/8 ms. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：247 / 252
页数：6
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