A New Embedded Inductor for ZVS DC-DC Converter Applications

被引：0
|
作者：
Fang, Xiangming [1 ]
Wu, Rongxiang [1 ]
Peng, Lulu [1 ]
Sin, Johnny K. O. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年
关键词：
DC-DC power conversion; monolithic inductor; power integrated circuits; proximity effect;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a new tapered silicon-embedded coreless power inductor is proposed and demonstrated. The width and depth for the different turns of the inductor are designed with different values to reduce the proximity effect. An 18.6 nH inductance and a peak Q factor of 12.1 are achieved at 23 MHz within a chip area of 0.8 mm(2). The AC power loss of the inductor is reduced by a maximum of 56% using the novel design. The inductor shows a peak efficiency of 91% in ZVS conversion applications, and is the highest in monolithic ZVS DC-DC converters reported so far.
引用
收藏
页码：53 / 56
页数：4
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