Phase stability and elastic properties of CuGaSe2 under high pressure

被引:14
作者
Pluengphon, Prayoonsak [1 ]
Bovornratanaraks, Thiti [2 ,3 ]
机构
[1] Huachiew Chalermprakiet Univ, Fac Sci & Technol, Div Phys Sci, Samut Prakan 10540, Thailand
[2] Chulalongkorn Univ, Fac Sci, Dept Phys, Extreme Condit Phys Res Lab, Bangkok 10330, Thailand
[3] CHE, ThEP Ctr, Bangkok 10400, Thailand
关键词
CuGaSe2; Phase stability; Elastic properties; High pressure; GENERALIZED GRADIENT APPROXIMATION; TERNARY CHALCOPYRITE COMPOUNDS; ELECTRONIC-PROPERTIES; SEMICONDUCTORS; TRANSITIONS; MOLECULES; CUINSE2;
D O I
10.1016/j.ssc.2015.05.019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report stability of high pressure phases and elastic properties in CuGaSe2, especially in cubic and orthorhombic phases. The distorted structures from Fm (3) over barm and Cmcm consist of Pmmn, P21/m, Amm2 and P4/mmm were observed. Cu and Ga sites in Fm (3) over barm and Cmcm can distinguish in the lower symmetry space groups which are P4/mmm and Amm2, respectively. The enthalpy differences of an interested structure are compared in the pressure range 0-100 GPa. The phonon dispersion relation of CuGaSe2 was studied, and found that the P4/mmm and Amm2 space groups give stability of phonon vibration modes. Moreover, we observe chemical bonds and elastic properties of CuGaSe2 at high-pressure conditions. Elastic constants indicate mechanical stability of CuGaSe2 in P4/mmm and Amm2 phases. Although CuGaSe2 has become nonsemiconductor material in the P4/mmm and Amm2 phases, the strong of covalent bonds and sharing electrons are still increased by high pressure effect. (C) 2015 Elsevier Ltd. All rights reserved.
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页码:1 / 5
页数:5
相关论文
共 35 条
  • [1] Structural, electronic and optical calculations of Cu(In,Ga)Se2 ternary chalcopyrites
    Belhadj, A
    Tadjer, A
    Abbar, B
    Bousahla, Z
    Bouhafs, B
    Aourag, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (11): : 2516 - 2528
  • [2] STRUCTURAL PHASE TRANSITION, ELASTIC AND ELECTRONIC PROPERTIES OF CuXSe2 (X = In, Ga) CHALCOPYRITE
    Bouguetaia, T.
    Abidri, B.
    Benbahi, B.
    Rached, D.
    Hiadsi, S.
    Rabah, M.
    [J]. SURFACE REVIEW AND LETTERS, 2012, 19 (02)
  • [3] High pressure orthorhombic structure of CuInSe2
    Bovornratanaraks, T.
    Saengsuwan, V.
    Yoodee, K.
    McMahon, M. I.
    Hejny, C.
    Ruffolo, D.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (35)
  • [4] High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4
    Errandonea, D.
    Kumar, Ravhi S.
    Manjon, F. J.
    Ursaki, V. V.
    Tiginyanu, I. M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [5] Forces in molecules
    Feynman, RP
    [J]. PHYSICAL REVIEW, 1939, 56 (04): : 340 - 343
  • [6] Frantsevich I., 1983, Elastic Constants and Elastic Moduli of Metals and Insulators Handbook
  • [7] ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS
    GIANNOZZI, P
    DE GIRONCOLI, S
    PAVONE, P
    BARONI, S
    [J]. PHYSICAL REVIEW B, 1991, 43 (09) : 7231 - 7242
  • [8] Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure
    Gomis, O.
    Santamaria-Perez, D.
    Vilaplana, R.
    Luna, R.
    Sans, J. A.
    Manjon, F. J.
    Errandonea, D.
    Perez-Gonzelez, E.
    Rodriguez-Hernandez, P.
    Munoz, A.
    Tiginyanu, I. M.
    Ursaki, V. V.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 583 : 70 - 78
  • [9] High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4
    Gomis, O.
    Vilaplana, R.
    Manjon, F. J.
    Santamaria-Perez, D.
    Errandonea, D.
    Perez-Gonzalez, E.
    Lopez-Solano, J.
    Rodriguez-Hernandez, P.
    Munoz, A.
    Tiginyanu, I. M.
    Ursaki, V. V.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (07)
  • [10] OPTICAL-ABSORPTION AND PHASE-TRANSITIONS IN CU-III-VI2 COMPOUND SEMICONDUCTORS AT HIGH-PRESSURE
    GONZALEZ, J
    RINCON, C
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1990, 51 (09) : 1093 - 1097